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A model is described for the effects of gamma-induced ionizing noise in infrared sensors, taking into account the incident gamma spectrum, both Compton events in the detector and secondary hot elec...
A model is described for the effects of gamma-induced ionizing noise in infrared sensors, taking into account the incident gamma spectrum, both Compton events in the detector and secondary hot electrons from the metal surroundings, partial or total deposition of the initial hot electron energy, detector geometry, and preamplifier impulse response. The model as coded gives predicted pulse height distributions and, for threshold-gating type circumvention, predicted duty cycles; it indicates that detector volume should be minimized. Good agreement with experimental results is achieved. (Author).