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Semiconductors and semimetals. Volume 42, Oxygen in silicon
- Available as
- Online
- Summary
-
This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The f...
This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions, cover thoroughly the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen.Key Features* Comprehensive study of the behavior of oxygen in silicon* Discusses silicon crystals for VLSI and ULSI applic
Details
- Creator
- volume editor, Fumio Shimura
- Format
- Books
- Language
- English
- Contributors
- Publication
-
- Boston : Academic Press, c1994
- Physical Details
-
- 1 online resource (711 p.)
- ISBNs
- 1281514233, 9786611514235, 0080864392, 0127521429
- OCLC
- ocn808684079
- Description based upon print version of record.
- Includes bibliographical references and index.
- English
- Front Cover; Oxygen in Silicon: Semiconductors and Semimetals; Copyright Page; Contents; List of Contributors; Preface; Chapter 1. Introduction to Oxygen in Silicon; Chapter 2. The Incorporation of Oxygen into Silicon Crystals; I . Introduction; II. Silicon Crystal Growth; III. Characteristics of Czochralski Silicon Growth; IV. Oxygen Incorporation and Segregation in Czochralski Silicon Growth; V. Controlled Oxygen Silicon Growth; VI. Summary; References; Chapter 3. Characterization Techniques for Oxygen in Silicon; I. Introduction; II. Physical Techniques; Ill. Chemical Techniques
- IV. Electrical TechniquesV. Summary; References; Chapter 4. Oxygen Concentration Measurement; I. Introduction; II. Infrared Absorption Measurements Under Ideal Conditions; III. Infrared Spectrometers; IV. Analysis of Oxygen Spectra; V. Absolute Determinations and Calibration Factors; VI. Standards and Reference Materials; VII. Summary; Acknowledgments; References; Chapter 5. Intrinsic Point Defects in Silicon; I. Introduction; II. Swirl Defect Manifestation of Intrinsic Point Defects; III. Thermal Defects in Silicon; IV. Self-Diffusion
- V. Coexistence of Vacancies and Self-Interstitials in SiliconVI. Interstitial Configuration and Charge-Enhanced Migration; VII. Formation and Migration Parameters of Point Defects; VIII. Defect Energetics and Pathways from Theoretical Calculations; IX. Summary; References; Chapter 6. Some Atomic Configurations of Oxygen; I. Introduction; II. Spectroscopy of Localized Modes in Semiconductors; III. Interstitial Oxygen; IV. Quasi-Substitutional Oxygen; V. Comparison with Other Light Element Impurities; VI. Oxygen in Other Semiconductors; VII. Summary; Acknowledgments; References
- Chapter 7. Electrical Properties of Oxygen in SiliconI. Introduction; II. Thermal Donors; III. New Donors; References; Chapter 8. Diffusion of Oxygen in Silicon; I. Introduction; II. Direct Measurements of Normal Oxygen Diffusion; III. Indirect Measurements of Normal Oxygen Diffusion; IV. Enhanced Oxygen Diffusion Not Involving Hydrogen; V. Silicon Containing Hydrogen Impurities; VI. Theoretical Modeling of Oxygen Diffusion; VII. Constraints on Models of Thermal Donor Centers; VIII. Summary; Acknowledgments; References; Chapter 9. Mechanisms of Oxygen Precipitation: Some Quantitative Aspects
- I. IntroductionII. Volume Shortage Associated with Oxygen Precipitation; III. Precipitate Nucleation; IV. Precipitate Growth; V. The Effect of Carbon; VI. Defect Generation; VII. Summary: The Free Energy and Flux Balance Treatment of the Oxygen Precipitation Problem; References; Chapter 10. Simulation of Oxygen Precipitation; I. Introduction; II. Model Types; III. Models and Experimental Results; V. On the Interactions of Oxygen with Other Defects; VI. Summary; References; Chapter 11. Oxygen Effect on Mechanical Properties; I. Introduction
- II. Plastic Deformation and Dislocations in Silicon Crystals