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Research on the radiation effects and compact model of SiGe HBT
- Author / Creator
- Available as
- Online
Details
- Creator
- Yabin Sun
- Format
- Books
- Language
- English
- Publication
-
- Singapore : Springer, 2017
- Series
- Physical Details
-
- 1 online resource
- ISBNs
- 9789811046124, 9811046123, 9789811046117, 9811046115, 9811046115, 9789811046117
- OCLC
- on1007521036
- ""Supervisorâ#x80;#x99;s Foreword""; ""Abstract""; ""Preface""; ""Declaration""; ""Published Academic Articles""; ""Acknowledgements""; ""Contents""; ""About the Author""; ""Abbreviations""; ""1 Introduction""; ""1.1 Background""; ""1.1.1 Space Radiation Environment and Radiation Effect""; ""1.1.2 Development and Application of SiGe HBT Technology""; ""1.2 Radiation Effect and Compact Model of SiGe HBT""; ""1.2.1 Radiation Effect of SiGe HBT""; ""1.2.2 Compact Model of SiGe HBT""; ""1.3 Research Work in This Dissertation""; ""References""; ""2 Ionization Damage Effect in SiGe HBT""
- ""2.1 Interaction Mechanism Between Gamma Rays and Materials""""2.2 Experiment""; ""2.3 Results and Discussion""; ""2.3.1 SiGe HBT1 with Emitter and Substrate Connecting Together""; ""2.3.2 Ionization Damage in SiGe HBTs with Backside Collector Electrode""; ""2.3.3 Degradation Mechanism in Gamma Ray Irradiated SiGe HBTs""; ""2.4 Ionization Damage in SiGe HBT at Different Dose Rate""; ""2.4.1 Results of Ionization Damage at Different Dose Rate""; ""2.4.2 Mechanism of Enhanced Low-Dose-Rate Sensitivity""; ""2.5 Bias Dependence of Ionization Damage in SiGe HBT""
- ""2.5.1 Irradiation Under High-Dose Rate""""2.5.2 Irradiation Under High-Dose Rate""; ""2.6 Conclusion""; ""References""; ""3 Displacement Effects in SiGe HBT""; ""3.1 Interaction Mechanism Between Swift Heavy Ion and Materials""; ""3.2 Experiment""; ""3.3 Irradiation Effects of 25Â MeV Silicon Ions""; ""3.3.1 Sige HBT1 with Emitter and Substrate Connecting Together""; ""3.3.2 Performance Degradation of SiGe HBT2""; ""3.3.3 Physical Mechanism Analysis for Heavy Ion Radiation""; ""3.4 Degradation Difference for Forward and Reverse Current Gain""; ""3.4.1 Experimental Result""
- ""3.4.2 Mechanism Analysis and Discussion""""3.5 Comparison of Different Heavy Ion Radiation""; ""3.5.1 Experimental Samples and Methods""; ""3.5.2 Experimental Results Analysis and Discussion""; ""3.6 Effect of Bias Conditions""; ""3.7 Conclusion""; ""References""; ""4 Single Event Transients in SiGe HBT""; ""4.1 Mechanism of Single Event Effects""; ""4.2 Experiment""; ""4.3 Results and Discussion""; ""4.3.1 Effects of Laser Energy""; ""4.3.2 Effects of Load Resistance""; ""4.3.3 Effects of Bias Condition""; ""4.4 Simulation of Single Event Transient in SiGe HBT""
- ""4.4.1 Electric Potential and Electric Field""""4.4.2 Location Sensitivity Analysis of Single Event Transisent""; ""4.5 Conclusion""; ""References""; ""5 Small-Signal Equivalent Circuit for SiGe HBT Based on Distributed Network""; ""5.1 Significance of SiGe HBT Distributed Equivalent Circuit""; ""5.2 Establishment of Small-Signal Model""; ""5.2.1 Link Base Region (Region I)""; ""5.2.2 Intrinsic Transistor (Region II)""; ""5.2.3 Extrinsic Base Region (Region III)""; ""5.2.4 Equivalent Circuit for the Whole Transistor""; ""5.3 Approximation and Simplification of Proposed Model""